发明名称 |
Semiconductor element and method for fabricating the same |
摘要 |
A heterojunction bipolar transistor comprises a collector layer, a base layer formed on the collector layer and an emitter layer formed on the base layer. The emitter layer includes a first semiconductor layer covering the entire top surface of the base layer and a second semiconductor layer formed on a predetermined part of the first semiconductor layer. An inactivated region is formed, by ion implantation, in a region of the collector layer located below the base layer except for a part thereof corresponding to the second semiconductor layer. The edge of the inactivated region is located away from the edge of the second semiconductor layer, and a region of the first semiconductor layer between the edge of the inactivated region and the edge of the second semiconductor layer is depleted.
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申请公布号 |
US7176098(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20050062851 |
申请日期 |
2005.02.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KOJIMA KEISUKE;TANBO TOSHIHARU;MURAYAMA KEIICHI |
分类号 |
H01L21/331;H01L21/8222;H01L29/737;H01L29/739 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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