Methods of forming CoSi2, methods of forming field effect transistors, and methods of forming conductive contacts

摘要

The invention included to methods of forming CoSi₂, methods of forming field effect transistors, and methods of forming conductive contacts. In one implementation, a method of forming CoSi₂ includes forming a substantially amorphous layer comprising MSi_x over a silicon-containing substrate, where "M" comprises at least some metal other than cobalt. A layer comprising cobalt is deposited over the substantially amorphous MSi_x-comprising layer. The substrate is annealed effective to diffuse cobalt of the cobalt-comprising layer through the substantially amorphous MSi_x-comprising layer and combine with silicon of the silicon-containing substrate to form CoSi₂ beneath the substantially amorphous MSi_x-comprising layer. Other aspects and implementations are contemplated.