| 摘要 |
The electron emission device includes a first electrode; a semiconductor barrier that has a first face disposed to face the first electrode and a second face which is opposite face of the first face, and is formed with a wide bandgap semiconductor; an insulating material that forms a space sealed between the first electrode and the semiconductor barrier; an inert gas that is encapsulated in the space; a second electrode that is disposed to face a second face of the semiconductor barrier interposing vacuum therebetween; a first voltage applying unit that applies a voltage between the first electrode and the semiconductor barrier; and a second voltage applying unit that applies a voltage between the semiconductor barrier and the second electrode.
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