发明名称 |
METHOD FOR HIGH PERFORMANCE INDUCTOR FABRICATION USING A TRIPLE DAMASCENE PROCESS WITH COPPER BEOL |
摘要 |
A method of forming a high performance inductor comprises providing a substrate; forming a plurality of wiring levels over the substrate, wherein each of the wiring levels comprise a dielectric layer; forming a first trench having a first depth in a first dielectric layer on a first wiring level; forming a second trench in the first dielectric layer having a second depth extending at least into a second wiring level; forming a conductor layer substantially simultaneously in the first and second trenches; and removing portions of the conductor layer overfilling the first and second trenches to form a spiral-shaped inductor in the second trench. The method may further comprise forming an interconnect structure in the first trench.
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申请公布号 |
US2007032030(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
US20050161415 |
申请日期 |
2005.08.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS D.;ERTURK METE;HE ZHONG-XIANG;STAMPER ANTHONY K. |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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