| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device capable of performing a reading operation at a high speed with a simple configuration. SOLUTION: The ferroelectric memory device is provided with a plurality of memory cells connected to each bit line to store prescribed data, and a plurality of sense amplifiers for amplifying data read from the memory cells, wherein a sense amplifier is provided with a first n type MOS transistor with first voltage supplied to a source thereof, a first precharge part for precharging the drain of the first n type MOS transistor to second voltage being positive voltage higher than the first voltage, a transistor control part for controlling resistance between the source and the drain of the first n type MOS transistor on the basis of the voltage of a bit line when data stored in a memory cell is read to the bit line and lowering the voltage of the drain precharged to the second voltage, and a voltage control part for lowering the voltage of the bit line on the basis of drop of the drain voltage. COPYRIGHT: (C)2007,JPO&INPIT
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