SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a method for manufacturing a high quality semiconductor light-emitting device. There is prepared a first semiconductor substrate composed of an n-type ZnO substrate. A light-emitting multilayer structure including a light-emitting layer which is composed of a ZnO compound semiconductor is formed on the first substrate. A p-side electrode is formed on the light-emitting multilayer structure. A first eutectic material layer composed of an eutectic material is formed on the p-side electrode. A second eutectic material layer composed of an eutectic material is formed on a conductive second substrate. The first substrate and the second substrate are joined together by eutectically bonding the first eutectic material layer and the second eutectic material layer. The first substrate is subjected to a processing. An n-side electrode is formed on a part of the first substrate.