发明名称 |
Determining dopant content of doped amorphous semiconductor layer on carrier comprises use of spectral ellipsometry and reference Tauc curve |
摘要 |
<p>Determining the dopant content of a doped amorphous semiconductor layer (10) on a carrier (1) comprises preparing a reference Tauc curve relating dopant concentration to the slope (b) of the linear region. The square root of the product of absorption coefficient (alpha ) and photon energy (E) (y axis) is plotted against photon energy and the slope (b) equals delta y/delta (E -Et) where Et is the band gap. The plot is repeated for the dopant layer to be tested using spectral ellipsometry, the slope (b) is found and thus the dopant concentration.</p> |
申请公布号 |
DE102005047105(B3) |
申请公布日期 |
2007.02.08 |
申请号 |
DE20051047105 |
申请日期 |
2005.09.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SCHMIDT, GERHARD;SCHIFFER, THORSTEN T.;TRATTER, EDGAR |
分类号 |
H01L21/66;G01N21/21;H01L23/29 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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