VCSEL SYSTEM WITH LATERAL P-N JUUNCTION

摘要

PROBLEM TO BE SOLVED: To provide a GaN VCSEL with a multiple gain region capable of suppressing loss and obtaining larger optical gain.

SOLUTION: In the vertical cavity of VCSEL, the multiple gain regions are formed with separated spacers. Each gain region includes a quantum well consisting of multiple quantum well layers. The lateral p-n junction is formed between this quantum well and an outer shell section formed around the vertical cavity. Photons are generated in the multiple gain region by applying forward bias to the lateral p-n junction.

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