| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for drawing a pattern of a photomask by which changes and fluctuation in pattern dimensions depending on positions within a photomask plane are corrected and changes in dimensions due to PED (post exposure delay) in vacuum from the start of drawing to the finish can be corrected. <P>SOLUTION: The method for drawing a pattern of a photomask is characterized in that a pattern of a photomask is drawn by an electron beam while an offset value to be added to a shot size of an electron beam drawing apparatus is arbitrarily changed according to positions in the photomask plane. The method for drawing a pattern of a photomask is characterized in that a pattern is drawn while an offset value to be added to the shot size of the electron beam drawing apparatus is gradually increased or decreased with lapse of time from starting drawing. <P>COPYRIGHT: (C)2007,JPO&INPIT |
