| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor substrate to remove a rugged surface of an organic layer overlapping a storage electrode. SOLUTION: The method for manufacturing a thin film transistor substrate to remove a rugged surface of an organic layer overlapping a storage electrode includes steps of forming a passivation layer on a substrate where a storage electrode is formed, forming an organic layer covering the passivation layer, partially removing the organic layer in a region overlapping the storage electrode to form a concave portion having a rugged pattern on its bottom surface, planarizing the rugged pattern on the bottom surface, and removing the planarized organic layer on the passivation layer to form an opening which is the concave portion extended to the upper face of the passivation layer. COPYRIGHT: (C)2007,JPO&INPIT |
