| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method etc. which are capable of speeding up an etching rate, making a mask selection ratio high, and forming an etched shape of high accuracy by replacing gas in a processing chamber with another efficiently. SOLUTION: The etching method comprises an etching process E of placing a silicon substrate on a base mount inside the processing chamber, then reducing the internal pressure of the processing chamber by exhausting its gas, introducing etching gas into the reduced-pressure processing chamber to turn it to plasma, and applying a bias potential to the base mount to subject the silicon substrate to etching; and a protective film forming process D of reducing the internal pressure of the processing chamber by exhausting its gas, introducing a protective film forming gas into the processing chamber to turn it to plasma, and forming a protective film on the silicon substrate. The etching process E and the protective forming process D are alternately repeated. When it comes just before a prescribed time (time zones indicated by codes Ee and De), the supply of the etching gas or the protective film forming gas is stopped, and the flow rate of the exhaust from the processing chamber is increased more than before. COPYRIGHT: (C)2007,JPO&INPIT
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