| 发明名称 |
Non-volatile semiconductor memory device and process of manufacturing the same |
| 摘要 |
In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film. |
| 申请公布号 |
US2007029578(A1) |
申请公布日期 |
2007.02.08 |
| 申请号 |
US20060580929 |
申请日期 |
2006.10.16 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAEGASHI TOSHITAKE;UENO KOKI |
| 分类号 |
H01L21/76;H01L29/768;H01L21/336;H01L21/8247;H01L27/115;H01L27/148;H01L29/74;H01L29/788;H01L29/792 |
主分类号 |
H01L21/76 |
| 代理机构 |
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