发明名称 PRESSURE CONTROL SYSTEM OF SINGLE CRYSTAL GROWER AND PRESSURE CONTROL METHOD USING THEREOF
摘要 A pressure control system of a single crystal growth apparatus and a pressure control method of a single crystal growth process using the same are provided to keep stably a high pressure state in a chamber and to improve the productivity of silicon crystal by controlling directly the suction of a pump without an additional pressure control unit using a controller. A pressure control system of a single crystal growth apparatus comprises a main pump for transferring a vacuum force into a chamber, an auxiliary pump for reinforcing the vacuum force of the main pump, a pressure gauge for measuring an inner pressure of the chamber, a controller for controlling the inner pressure of the chamber, and a wire for connecting the chamber, the pressure gauge, the main pump and the auxiliary pump with each other.
申请公布号 KR100682585(B1) 申请公布日期 2007.02.07
申请号 KR20050117544 申请日期 2005.12.05
申请人 SILTRON INC. 发明人 EOM, IL SOO;SHIN, HYUN GOO;NA, GWANG HA
分类号 C30B15/20 主分类号 C30B15/20
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