| 摘要 |
<p>A magnetic memory device (M) includes a plurality of storage cells (1) disposed in two dimensions, read lines (5a,5b) that supply a read current (Ib1,Ib2) for reading information from a first power supply (Vcc) to the respective storage cells, and a second power supply (51) that is connected to at least some of the read lines (5a,5b) and applies an intermediate voltage (Vry), which is lower than the voltage (Vcc) supplied by the first power supply, to the connected read lines (5a,5b).</p> |
