发明名称 Method for forming a semiconductor device
摘要 A substrate (155) is placed into a plating bath (19, 59), a current in the bath is measured, and a film (110) is plated onto the substrate (155). In one embodiment the current is measured using a sensing array (57) positioned within the bath, and the measurement is used to control a plating deposition parameter. In an alternative embodiment the current is measured using the sensing array (57) and a characteristic of the plated film is controlled using a corresponding control array (53) also positioned within the plating bath (59).
申请公布号 KR100678877(B1) 申请公布日期 2007.02.07
申请号 KR20010000142 申请日期 2001.01.03
申请人 发明人
分类号 H01L21/66;C25D7/12;C25D21/12;H01L21/288;H01L21/3205 主分类号 H01L21/66
代理机构 代理人
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