| 摘要 |
<p>In a magnetic memory (1), a magneto-resistivity effect element (4) is disposed adjacently to a wire (5) for producing a writing magnetic field and further a ferromagnetic body (20) is disposed so as to cover at least part of the wire (5) and consequently orient the state (X) of magnetization of this ferromagnetic body (20) in one direction. According to this invention, it is made possible to homogenize the magnetic property during the course of writing and implement the writing work efficiently.</p> |
