SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

摘要

A semiconductor device and its forming method are provided to improve the controllability of first and second gate lines on a channel region and to restrain the generation of a short channel effect by forming an improved channel region composed of a pair of doped regions between the first and the second gate lines. A fin portion(104) with first and second sidewalls opposite to each other is arranged on a substrate(100). A first gate line is formed like a spacer type structure at the first sidewall of the fin portion. A second gate line is formed like a spacer type structure at the second sidewall of the fin portion. First and second doped regions(127) are formed between the first and the second gate lines in the fin portion to define a channel region. The first and the second doped regions are spaced apart from each other. An interlayer dielectric pattern is formed on the resultant structure. First and second bit lines for contacting the first and the second doped regions are then formed thereon.