Photodiode having extended well region

摘要

A semiconductor imager structure having a photodiode being provided as a well region formed within a substrate layer and a transistor electrically connected to the photodiode and having a terminal that has a same electrical potential as the photodiode. The well region of the photodiode having an extended portion so that at least a portion of the terminal of the transistor has the same electrical potential as the photodiode is formed within the extended portion of the well region of the photodiode.