发明名称 |
Semiconductor memory device and method of outputting data strobe signal thereof |
摘要 |
A semiconductor memory device is disclosed. The device comprises at least one data input/output reference signal input and output pin and a plurality of integrated circuits, each with a data input/output reference signal input and output pad connected to the data input/output reference signal input and output pin. Each integrated circuit further comprises a data input/output reference signal input and output buffer for buffering a data input/output reference signal input from the data input/output reference signal input and output pad when data is input. This buffer also buffers an internally generated data input/output reference signal, and outputs the buffered signal when data is output. The internally generated data input/output reference signal output can be disabled on each integrated circuit in response to a control signal, thus allowing a single one of the plurality of integrated circuits to be selected to generate the reference signal.
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申请公布号 |
US7173871(B2) |
申请公布日期 |
2007.02.06 |
申请号 |
US20030392582 |
申请日期 |
2003.03.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KONG EUN-YOUP;JEON JUN-YOUNG;LEE JAE-HYEONG |
分类号 |
G11C17/18;G11C7/10;G11C8/00 |
主分类号 |
G11C17/18 |
代理机构 |
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地址 |
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