发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 A semiconductor IC device is provided to improve the resistance against a reflow crack by increasing a bonding area between a semiconductor chip and a resin using a through hole of a chip mounting portion. A semiconductor IC device includes a semiconductor chip(2) with a semiconductor IC and bonding pads, a chip mounting portion for mounting the chip, a suspension lead portion(4) for supporting the chip mounting portion, a plurality of inner leads around the chip, a plurality of outer leads prolonged from the inner leads, a plurality of bonding wires for connecting electrically the bonding pads of the chip with front portions of the inner leads, and a resin body for encapsulating selectively the resultant structure. The size of the chip mounting portion is smaller than that of the chip. The chip mounting portion has a through hole(31).
申请公布号 KR100680668(B1) 申请公布日期 2007.02.02
申请号 KR20060099274 申请日期 2006.10.12
申请人 HITACHI, LTD.;HITACHI ULSI SYSTEMS CO., LTD. 发明人 KAJIHARA YUJIROU;SUZUKI KAZUNARI;TSUBOSAKI KUNIHIRO;SUZUKI HIROMICHI;MIYAKI YOSHINORI;NAITOH TAKAHIRO;KAWAI SUEO
分类号 H01L23/495;H01L23/50;H01L21/48;H01L21/52;H01L21/60 主分类号 H01L23/495
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