发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a technology capable of detecting the temperature of a semiconductor device with high accuracy. <P>SOLUTION: A temperature detection circuit 14 for detecting the temperature of the semiconductor device comprises a short-period oscillator 15 for generating a clock signal CLK1 having positive-temperature characteristic related to frequency, a short-period oscillator 16 for generating a clock signal CLK2 having a negative temperature characteristic related to frequency, and a temperature signal generating section 17 for generating temperature signal TEMP that varies according to the temperature of the semiconductor device, based on the clock signals CLK1 and CLK2. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007024865(A) 申请公布日期 2007.02.01
申请号 JP20060060651 申请日期 2006.03.07
申请人 RENESAS TECHNOLOGY CORP 发明人 GYOTEN TAKAYUKI;MORISHITA GEN;DOSAKA KATSUMI
分类号 G01K7/01 主分类号 G01K7/01
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