SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device by reducing the crystalline defects and the surface roughness of a silicon germanium film epitaxially grown on a semiconductor substrate. SOLUTION: A silicon germanium film 71 is epitaxially grown on a semiconductor wafer 70 and a distorted silicon film 72 is epitaxially grown on the silicon germanium film 71. The distribution of the germanium concentration in the direction of the thickness of the silicon germanium film 71 has a peak of the maximum concentration in the middle area in the direction of the thickness of the silicon germanium film 71. After that, a semiconductor device is formed on the semiconductor wafer 70 on which the silicon germanium film 71 and the distorted silicon film 72 have been formed. COPYRIGHT: (C)2007,JPO&INPIT