| 摘要 |
PROBLEM TO BE SOLVED: To realize provision of holes to a stress applying film while mobility of carrier is improved. SOLUTION: The stress applying film 7 is formed over a source/drain region 5 of an nMOS transistor Tr. This stress applying film 7 is provided with an aperture 4. This aperture is formed longer in the direction parallel to the propagating direction of carrier moving within the channel region of the nMOS transistor Tr for an electric connecting region (contact plug forming region) to the source/drain region 5. COPYRIGHT: (C)2007,JPO&INPIT
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