| 摘要 |
A method for manufacturing an LCOS device. The method includes providing a substrate (e.g., silicon wafer) having a surface region. The method includes forming an interlayer dielectric layer overlying the surface region of the substrate. The method patterns the interlayer dielectric layer to form a plurality of recessed regions. Each of the recessed regions corresponds to a pixel element for a LCOS device. Each of the recessed regions is isolated by a portion of dielectric material defining a border for each of the recessed regions. Each of the border regions forming a peripheral region surrounding each recessed region. The method deposits an aluminum material or aluminum alloy material within each of the recessed regions to fill each of the recessed regions and to cover exposed portions of the border regions. The method forms a photomask overlying the aluminum material and patterns the photomask to expose regions corresponding to the recessed regions and protects regions corresponding to the border regions. The method removes exposed regions of the aluminum material while protecting the regions corresponding to the border regions with the photomask. The method continues the removing until the aluminum material has been removed to a vicinity of an upper region of the border regions. Next, the method strips the patterned photomask to expose protruding aluminum material, which surrounds the patterned aluminum material. The method touch-up polishes the protruding aluminum material and portions of the patterned aluminum material while using the border regions as a polish stop to planarize an upper surface region formed by the border regions and the patterned aluminum material.
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