| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain both high speed of SRAM and nonvolatile of EEPROM by a simple constitution. <P>SOLUTION: A 1st amplifying circuit section 100 is provided with a 1st load circuit 122, a 1st nonvolatile storage means 102 and a 1st switch means 126, and these circuit and means are connected in series between a 1st power source and a 2nd power source. Similarly, a 2nd amplifying circuit section 110 is provided with a 2nd load circuit 124, a 2nd nonvolatile storage means 104 and a 2nd switch means 128, and they are connected in series between the 1st power source and the 2nd power source. A flip-flop is composed by the 1st amplifying circuit section 100 and the 2nd amplifying circuit section 110. By arranging such constitution, a volatile storage operation such as the SRAM for holding the mutually reversed electric potential information and a nonvolatile storage operation by the two nonvolatile storage means are both attained. <P>COPYRIGHT: (C)2007,JPO&INPIT |
