PROCESS FOR FORMING AN ELECTRONIC DEVICE INCLUDING DISCONTINUOUS STORAGE ELEMENTS
摘要
A process for forming an electronic device can include forming a first trench (22, 23) within a substrate (12), wherein the trench includes a wall and a bottom and extends from a primary surface of the substrate. The process can also include forming discontinuous storage elements (64) and forming a first gate electrode (92) within the trench such that, a first discontinuous storage element of the discontinuous storage elements lies between the first gate electrode and the wall of the trench. The process can further include removing the discontinuous storage elements that overlie the primary surface of the substrate. The process can still further include forming a second gate electrode that overlies the first gate electrode and the primary surface of the substrate.
申请公布号
WO2007014118(A2)
申请公布日期
2007.02.01
申请号
WO2006US28579
申请日期
2006.07.24
申请人
FREESCALE SEMICONDUCTOR;CHINDALORE, GOWRISHANKAR, L.;INGERSOLL, PAUL, A.;SWIFT, CRAIG, T.
发明人
CHINDALORE, GOWRISHANKAR, L.;INGERSOLL, PAUL, A.;SWIFT, CRAIG, T.