| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light emitting device and the semiconductor light emitting device capable of manufacturing the semiconductor light emitting device capable of improving the yield of lift-off for a p-type semiconductor layer and improving a breakdown voltage. SOLUTION: The manufacturing method of a semiconductor light emitting device comprises a mask layer forming step of forming two mask layers on a group III nitride based compound semiconductor substrate from a side close to the p-type semiconductor layer in the order of higher etching rates; a mask layer etching step; a semiconductor layer etching step; a side etching step of forming a trench where part of the p-type semiconductor layer is exposed by selectively etching the side surface of a higher etching rate mask layer of the two mask layers; an insulating film forming step of forming an insulating film so as to cover the exposed p-type semiconductor layer; a mask layer removing step; and an electrode layer forming step. COPYRIGHT: (C)2007,JPO&INPIT
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