| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such a matter that it is impossible to stably manufacture with a good reproducibility a semiconductor memory device equipped with variable resistive elements having an equal resistance value, since the resistance value of the variable resistive element fluctuates by a reducing reaction or an oxidizing reaction of a variable resistor influenced by hydrogen or oxygen during a manufacturing process, in the semiconductor memory device equipped with the variable resistive element constituted by providing the variable resistor between a first electrode and a second electrode, whose electric resistance changes by impressing a voltage pulse between both electrodes. <P>SOLUTION: The semiconductor memory device equipped with the variable resistive element is made to be such a structure that has at least one layer of a reaction preventing film, constituted by a material having an action to block transmissions of a reduction species which expedites the reducing reaction of the variable resistor, and an oxidation species which expedites the oxidizing reaction of the variable resistor. Accordingly, a fluctuation of the resistance value of the variable resistive element is suppressed, and it is possible to realize with a good reproducibility the semiconductor memory device with the resistance value of small variation and a good controllability. <P>COPYRIGHT: (C)2007,JPO&INPIT |
