| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which a conductive layer can be provided below an electrode pad or a bump. <P>SOLUTION: This semiconductor device includes a semiconductor layer 10; a first conductive layer 14a provided above the semiconductor layer 10 and having a first width; a second conductive layer 14b connected to the first conductive layer 14a and having a second width smaller than the first width; interlayer insulation layers 50, 60 provided above the first and second conductive layers 14a, 14b; and an electrode pad 62 provided above the interlayer insulation layers 50, 60. A connection portion 30 where the first and second conductive layers 14a and 14b are connected is provided on a predetermined region 12 positioned inside from a vertically lower portion of an end of the electrode pad 62, and a reinforcing portion 14c is provided on the connection portion 30. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
