发明名称 |
Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film |
摘要 |
Example embodiments of the present invention relate to a method of forming a dielectric thin film and a method of fabricating a semiconductor memory device having the same. Other example embodiments of the present invention relate to a method of forming a ZrO<SUB>2 </SUB>thin film and a method of fabricating a capacitor of a semiconductor memory device using the ZrO<SUB>2 </SUB>thin film as a dielectric layer. A method of forming a ZrO<SUB>2 </SUB>thin film may include supplying a zirconium precursor on a substrate maintained at a desired temperature, thereby forming a chemisorption layer of the precursor on the substrate. The zirconium precursor may be a tris(N-ethyl-N-methylamino)(tert-butoxy) zirconium precursor. The substrate having the chemisorption layer of the precursor may be exposed to the plasma atmosphere of oxygen-containing gas for a desired time, thereby forming a Zr oxide layer on the substrate, and a method of fabricating a capacitor of a semiconductor memory device having the ZrO<SUB>2 </SUB>thin film.
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申请公布号 |
US2007026688(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
US20060485523 |
申请日期 |
2006.07.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG MIN-WOO;WON SEOK-JUN;KIM WEON-HONG;KWON DAE-JIN;PARK JUNG-MIN |
分类号 |
H01L21/20;H01L21/31;H01L21/469 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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