| 摘要 |
A vapor phase growing apparatus is provided to prevent a silicon wafer from being damaged in taking out the silicon wafer by reducing adhesion of a support part of the silicon wafer. A support unit supports a substrate(101) in a chamber(120), installed in the chamber and including a plurality of convex parts and a bottom surface of the support unit. The plurality of convex parts(112) restrict the substantially horizontal transfer of the substrate in their surrounding region. The back surface of the substrate is supported by the bottom surface of the support unit. Gas for forming a layer on the substrate is supplied through a first flow path connected to the chamber. The gas is exhausted from the chamber through a second flow path connected to the chamber. Each convex part has a front end part of R-type or spherical type.
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