发明名称 SPUTTERING APPARUTUS AND SPUTTERING METHOD
摘要 A sputtering apparatus is provided to embody excellent effect of forming a layer having a uniform quality by performing a reactive sputtering process. At least four targets(241a-241f) are installed in parallel in a vacuum chamber, separated from each other by a predetermined interval. An AC power source(E1,E2,E3) alternately applies a negative potential and a positive or ground potential to two of the targets. Each AC power source is connected to two targets not adjacent to each other. A magnet assembly(244) is composed of a plurality of magnets disposed in the rear part of each target to form magnetic flux in the front part of each target. A driving unit drives the magnet assembly in a manner that magnetic flux transfers in parallel to the target.
申请公布号 KR20070014992(A) 申请公布日期 2007.02.01
申请号 KR20060069713 申请日期 2006.07.25
申请人 ULVAC, INC. 发明人 KOBAYASHI MOTOSHI;TANI NORIAKI;KOMATSU TAKASHI;KIYOTA JUNYA;NAKAMURA HAJIME;ARAI MAKOTO
分类号 H01L21/203 主分类号 H01L21/203
代理机构 代理人
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