| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory which can accurately read stored data by generating an accurate reference current when reading data. SOLUTION: A self-test circuit 60 tests all dummy cells included in a memory array 10, and outputs a signal ERR indicting detection of a defective dummy cell and an address signal EAD indicating the address of the defective dummy cell. A write instruction circuit 62 outputs a signal DWC instructing write of data for the defective dummy cell in accordance with the signa ERR and the address signal EAD. A row decoder 20 and a column decoder 25 select the defective dummy cell in accordance with the address signal EAD, a read/write control circuit 30 rewrites data to the defective dummy cell by instruction of a control circuit 5 receiving the signal DWC, Thereby, data stored in the defective dummy cell is corrected. COPYRIGHT: (C)2007,JPO&INPIT
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