| 摘要 |
PROBLEM TO BE SOLVED: To improve the breakdown voltage of the whole periphery of a semiconductor region of a semiconductor element constituting an active element and a resistance element by a small area. SOLUTION: The FLR (Field Limiting Ring) region (4) is formed in a second semiconductor region (2), as surrounding the first semiconductor region (1) of the semiconductor element so as to be apart therefrom and consisting of a first conductive type semiconductor region. The FLR region (4) is constituted of a plurality of FLR regions (41, 42, 43) arranged in the elongating direction of the first semiconductor region so as to be apart from each other, and the FLR region (4) enclosing the first semiconductor region (1) is arranged so as to be apart from each other in the lengthwise direction and so as to be separated electrically. Consequently, the potential of the FLR region (4) enclosing the first semiconductor region (1) will not be uniform across the whole periphery, and, therefore, respective FLR regions (4) can be retained in the optimum potential for mitigating the electric field concentration of pn junction formed in an interface between the first semiconductor region (1) and the second semiconductor region (2). COPYRIGHT: (C)2007,JPO&INPIT
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