| 摘要 |
A semiconductor structure is described, including a semiconductor substrate and an amorphous semiconductor layer disposed on the front side of the semiconductor substrate, wherein the amorphous semiconductor layer is compositionally graded through its depth, from substantially intrinsic at the interface with the substrate, to substantially conductive at the opposite side. A plurality of front contacts are disposed on the backside of the substrate, and a plurality of vias formed through the substrate, wherein the plurality of vias are filled with a conductive material configured to electrically couple the amorphous semiconductor layer to one of the plurality of front contacts. Back contacts are disposed such that they are interdigitated with the front contacts. Related methods are also described.
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