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发明名称
NORMALLY OFF III-NITRIDE SEMICONDUCTOR DEVICE HAVING A PROGRAMMABLE GATE
摘要
A III-nitride semiconductor device which includes a charged gate insulation body.
申请公布号
US2007026587(A1)
申请公布日期
2007.02.01
申请号
US20060460725
申请日期
2006.07.28
申请人
BRIERE MICHAEL A
发明人
BRIERE MICHAEL A.
分类号
H01L21/84
主分类号
H01L21/84
代理机构
代理人
主权项
地址
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