发明名称 METHOD OF POLISHING WAFER
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a CMP device, which can make an amount of polish between wafers simultaneously polished uniform, and supply adequate polish slurry to the wafer even when a flow rate of supplied polish slurry is large. <P>SOLUTION: There are provided a polish plate 10 rotated driven about a first rotation axis Ax1, polish pad 11 attached onto the polish table 10, two sets of carriers 20, 20, which are rotated driven about second rotation axes Ax2, Ax2 decentered from the first axis Ax1 and holding wafers 12, 12 and pushing them against the polish pad 11, respectively, supply nozzle 30 for supplying polish slurry 13 onto the polish pad 11, and regulation mechanism 40 for relatively regulating a tip position of the supply nozzle 30 against the polish pad 11. The supply position of polish slurry is regulated by properly moving the tip of the supply nozzle 30 according to such as supply amount of polish slurry and position of the wafer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007027798(A) 申请公布日期 2007.02.01
申请号 JP20060294474 申请日期 2006.10.30
申请人 OKI ELECTRIC IND CO LTD 发明人 SHIMOKAWA MASAAKI
分类号 H01L21/304;B24B37/00;B24B57/02 主分类号 H01L21/304
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