METHOD FOR REPAIRING SEMICONDUCTOR MEMORY DEVICE

摘要

A method for repairing a semiconductor memory device is provided to prevent a residual fuse from coming in contact with its adjacent fuse by cutting a fuse including a stack structure of a barrier metal layer and a metal layer and by completely removing the residual fuse generated on an insulation layer by a dry or a wet etch process. A fuse(20) is formed on an insulation layer, including a stack structure of a barrier metal layer and a metal layer. A laser beam is irradiated to the upper part of the fuse to cut the fuse. The residue of the cut fuse is removed by a dry or a wet etch process. The barrier metal layer is composed of a single layer or a complex layer that is made of titanium tantalum, titanium nitride, tantalum nitride or a composition thereof. The metal layer is made of an aluminum layer, a tungsten layer or a copper layer.