发明名称 METHOD OF ELIMINATING RESIDUE IN ELECTRON EMITTING DEVICE, AND METHOD OF FABRICATING THE SAME
摘要 A method for eliminating residues in an electron emitting device and a method for fabricating the same are provided to suppress abnormal emission due to the residues by eliminating effectively the residues from a predetermined part except for a gate electrode and an electron emission layer. A first substrate(90) includes an anode electrode(80) and a phosphor layer(70). A second substrate(110) is disposed apart from the first substrate. A cathode electrode(120) is disposed in one direction on the second substrate. A plurality of gate electrodes(140,145) are disposed across the cathode electrode. A plurality of insulating layers(130,135) are disposed between the cathode electrode and the gate electrodes. An electron emission source hole is formed at an intersection between the cathode electrode and the gate electrons. An electron emission layer(150) is disposed within the electron emission source hole. A spacer is formed between the first and second substrate. A method of eliminating a residue in an electron emitting device includes a process for positioning the electron emission device in a chamber including a discharge gas, and a process for generating plasma.
申请公布号 KR20070014750(A) 申请公布日期 2007.02.01
申请号 KR20050069650 申请日期 2005.07.29
申请人 SAMSUNG SDI CO., LTD. 发明人 CHO, SUNG HEE;NAM, JOONG WOO;PARK, JONG HWAN
分类号 H01J1/30 主分类号 H01J1/30
代理机构 代理人
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