发明名称 |
THINNING OP A SI WAFER FOR MEMS-SENSORS APPLICATIONS |
摘要 |
<p>A method for thinning a wafer layer to a predetermined thickness comprises two phases of thinning. A first thinning phase and a second thinning phase, wherein the first thinning phase is a preparatory thinning phase and the second thinning phase is a final thinning phase, so performed that the structure comprising silicon meets as thinned the final thickness as predetermined. Such thinned layer in a wafer for instance, can be used in a sensor to be used in normal sized, micromechanical or even nano-sized devices for the device specific sensing applications in electro-mechanical devices.</p> |
申请公布号 |
WO2006128953(A3) |
申请公布日期 |
2007.02.01 |
申请号 |
WO2006FI00168 |
申请日期 |
2006.05.30 |
申请人 |
OKMETIC OYJ;LEMPINEN, VESA-PEKKA;MAEKINEN, JARI;TILLI, MARKKU |
发明人 |
LEMPINEN, VESA-PEKKA;MAEKINEN, JARI;TILLI, MARKKU |
分类号 |
B81C1/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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