| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device which is highly resistant to electrostatic breakdown withstand voltage. <P>SOLUTION: The solid-state imaging device is provided with a first conductivity type semiconductor substrate 51; a second conductivity type well formed adjacent to the surface of the semiconductor substrate; a light reception area including a plurality of first conductivity type electric charge accumulation areas formed in the wells that accumulates signal charges producing depending on the amount of incident light and vertical CCDs which are formed along columns of the electric charge accumulation areas, and wherein the signal charges accumulated in the electric charge accumulation areas are read out and they are transferred in a direction of the column; horizontal CCDs transferring the signal charges transferred from the vertical CCDs in a direction of the row; a peripheral circuit formed in a part of the peripheral area of the horizontal CCDs; a shield layer 90 which is formed on the semiconductor substrate 51 in a manner to surround the light reception area by using a conductive material, and which is electrically connected the first conductivity type semiconductor substrate; a supporting body 55 which is made of a conductive material and is arranged above the shield layer 90; and a transparent member 57 placed on the supporting body. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
