| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device with a method for easily removing foreign objects in a chamber up to a downstream process of the chamber. SOLUTION: This method concerns a fine particle removal method in a plasma etching device which contains an upper antenna 102, a lower electrode 103, pressure gauges P1 and P2, a gas supply means 110, gas exhaust means 111a and 111b, and a phase control means 108 that not only supplies the controlled high frequency waves of the same frequency to the upper antenna 102 and lower electrode 103 but also controls the high frequency wave phases from the same phase to the opposite phase. This method comprises two processes. One process applies voltage of the inverted voltage phase to the upper antenna 102 and lower electrode 103 when a semiconductor product substrate is treated, and another process applies voltage under the conditions that a voltage amplitude is 100 V or more and voltage phases to the upper antenna 102 and lower electrode 103 are the same under noncumulative gas, while the semiconductor product substrate is not treated so that electric discharge can take place to ensure that the height of the lower electrode 103 is lower than that during semiconductor product substrate treatment. COPYRIGHT: (C)2007,JPO&INPIT
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