发明名称 |
Compound semiconductor device and its manufacture |
摘要 |
A compound semiconductor device has: a substrate; a GaN channel layer; an n-type AlqGal-qN (0<q (1) electron supply layer; an n-type GaN cap layer; a gate electrode disposed on the cap layer and forming a Schottky contact; recesses formed on both sides of the gate electrode on source and drain sides by at least partially removing the cap layer, the recesses having a bottom surface of a roughness larger than a roughness of a surface of the cap layer under the gate electrode; a source electrode disposed on the bottom surface of the recess on the source side; and a drain electrode disposed on the bottom surface of the recess on the drain side.
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申请公布号 |
US2007026552(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
US20060541571 |
申请日期 |
2006.10.03 |
申请人 |
FUJITSU LIMITED |
发明人 |
KIMURA TOKUHARU;KIKKAWA TOSHIHIDE |
分类号 |
H01L21/00;H01L21/28;H01L21/335;H01L21/338;H01L29/20;H01L29/778;H01L29/812;H01L31/0328 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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