BIPOLAR TRANSISTOR AND POWER AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To provide a bipolar transistor in which a gain characteristic in a high frequency band is enhanced by keeping the uniformity of heat generation in a HBT cell. SOLUTION: The bipolar transistor has such a structure that a base mesa finger (emitter ledge layer 15, base layer 16 and collector layer 17) is held by two collector fingers (collector electrodes 13), and one base finger (base electrode 12) and two emitter fingers (emitter layer 14 and emitter electrode 11) on the opposite sides thereof are formed on the base mesa finger. The two emitter fingers are formed at symmetric positions with reference to the base finger. COPYRIGHT: (C)2007,JPO&INPIT