发明名称 |
Device for etching layers on semiconductor wafers, uses spectrometer for measurement of etching medium concentration |
摘要 |
<p>A device with etching equipment for etching complete layers or parts of layers to be removed from semiconductor wafers (5) with a liquid etching medium comprises a spectrometer (13) for measuring the concentration of the etching medium. Independent claims are also included for the following. (1) etching complete layers or parts of layers to be removed from semiconductor wafers; and (2) the application of a spectrometer in an etching device.</p> |
申请公布号 |
DE102005051812(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
DE20051051812 |
申请日期 |
2005.10.27 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HARFMANN, MARKUS;BINTER, ALEXANDER;SCHAGERL, GUENTER;SANTOS RODRIGUEZ, FRANCISCO JAVIER;PRAX, EMIL;FATHULLA, AHMAD |
分类号 |
H01L21/306;G01B11/06;H01L21/66 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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