发明名称 |
Method of forming a semiconductor device using a silicide etching mask |
摘要 |
Semiconductor devices and methods for fabricating a silicide of a semiconductor device are disclosed. An illustrated method comprises: forming a gate electrode; depositing an insulating layer; removing a predetermined portion of the insulating layer in order to expose a portion of the gate electrode; forming silicide on the exposed portion of the gate electrode; and etching the insulating layer while using the silicide as an etching mask.
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申请公布号 |
US7169678(B2) |
申请公布日期 |
2007.01.30 |
申请号 |
US20040950017 |
申请日期 |
2004.09.24 |
申请人 |
DONGBU ELECTRONICS, CO., LTD. |
发明人 |
KIM SEOK SU |
分类号 |
H01L21/336;H01L21/28;H01L21/311;H01L29/423;H01L29/49 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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