发明名称 |
Method for forming a contact in a semiconductor process |
摘要 |
After an etching stop layer and an interlayer dielectric film are formed on a semiconductor substrate including a contact formation portion, a polysilicon film and a anti-reflective layer are successively formed on the interlayer dielectric film. A second mask pattern exposing the polysilicon film is formed after etching the anti-reflective layer exposed through a first mask pattern. A third mask pattern is formed by attaching polymer on a sidewall of the second mask pattern. A contact hole exposing the contact formation portion is formed by etching the polysilicon film and the interlayer dielectric film using the third mask pattern as an etching mask. A conductive material is filled in the contact hole to form the contact. By attaching the polymer to the second mask pattern, a contact hole with a minute size can be formed.
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申请公布号 |
US2004038524(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20030404294 |
申请日期 |
2003.03.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG JAE-SEUNG;KWEAN SUNG-UN |
分类号 |
H01L21/28;H01L21/3065;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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