发明名称 |
Method of forming dual gate dielectric layer |
摘要 |
A method of forming a dual gate dielectric layer increases a performance of a semiconductor device by using a dielectric layer having a high dielectric constant, including forming a first dielectric layer having a predetermined thickness on a semiconductor substrate; removing the first dielectric layer formed on a second region, but leaving this layer on a first region; and forming a second dielectric layer having a dielectric constant higher than that of the first dielectric layer, on the first and second regions.
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申请公布号 |
US7169681(B2) |
申请公布日期 |
2007.01.30 |
申请号 |
US20040964170 |
申请日期 |
2004.10.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO MIN-HEE;KIM JI-YOUNG |
分类号 |
H01L21/76;H01L21/336;H01L21/762;H01L21/8234 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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