| 摘要 |
Characteristic fluctuation of a reference cell due to read disturb is prevented. A memory cell 27 m and a reference cell 27 r respectively have memory function bodies that are formed on both sides of a gate electrode and have a function to retain electric charge or polarization. The memory cell 27 m can store independent information pieces in memory function bodies 27 mr and 27 ml located on both sides of the gate electrode and the independent information pieces are read therefrom. On the other hand, in the reference cell 27 r, only the information piece stored in a memory function body 27 rl located on one side of the gate electrode is referred to in a sense amplifier 22.
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