发明名称 |
Preventive treatment method for a multilayer semiconductor structure |
摘要 |
A preventive treatment method for a multilayer semiconductor structure having a support substrate, at least one intermediate layer and a surface layer in which the surface layer is to be subjected to a subsequent chemical treatment. The method includes forming a protective layer between the intermediate layer and the surface layer. The protective layer is made from a material chosen to be sufficiently resistant to the chemical treatment to protect the intermediate layer from chemical attack.
|
申请公布号 |
US7169683(B2) |
申请公布日期 |
2007.01.30 |
申请号 |
US20030686082 |
申请日期 |
2003.10.14 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. |
发明人 |
GHYSELEN BRUNO;RAYSSAC OLIVIER |
分类号 |
H01L21/48;H01L21/20;H01L21/762 |
主分类号 |
H01L21/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|