发明名称 Preventive treatment method for a multilayer semiconductor structure
摘要 A preventive treatment method for a multilayer semiconductor structure having a support substrate, at least one intermediate layer and a surface layer in which the surface layer is to be subjected to a subsequent chemical treatment. The method includes forming a protective layer between the intermediate layer and the surface layer. The protective layer is made from a material chosen to be sufficiently resistant to the chemical treatment to protect the intermediate layer from chemical attack.
申请公布号 US7169683(B2) 申请公布日期 2007.01.30
申请号 US20030686082 申请日期 2003.10.14
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. 发明人 GHYSELEN BRUNO;RAYSSAC OLIVIER
分类号 H01L21/48;H01L21/20;H01L21/762 主分类号 H01L21/48
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